BU207

isc Silicon NPN Power Transistor BU207 DESCRIPTION ·High Voltage-VCEX= 1300V(Min.) ·Collector Current- IC = 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Peak 7.5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2.5 A 55 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.64 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU207 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICES Collector Cutoff Current VCE= 1300V; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5.0V; IC= 0 10 mA hFE DC Current Gain IC= 4.5A; VCE= 5V 2.25 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 125 pF fT Current-Gain—Bandwidth Product ...