isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Da...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
8.0
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
15
A
150
W
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.0 ℃/W
BU208D
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isc Silicon
NPN Power
Transistor
BU208D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 2A
VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC= 125℃
VEB= 5.0V; IC= 0
1.3
V
1.0 2.0
mA
300 mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V; ftest= 5MHz
7
MHz
VECF
C-E...