BU323AP

isc Silicon Darlington NPN Power Transistor BU323AP DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 475 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon Darlington NPN Power Transistor BU323AP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6 A; IB= 120mA 1.7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 10 A; IB= 300mA 2.7 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 6 A; IB= 120mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 3...