isc Silicon NPN Power Transistor
BU406H
DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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