isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed-
: tf= 750ns(Max) ·Lo...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed-
: tf= 750ns(Max) ·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection output stages
of TV’s and CRT’s
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
330
VCEV
Collector-Emitter Voltage
330
VCEO
Collector-Emitter Voltage
150
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
7
ICP
Collector Current-Peak Repetitive
10
ICP
Collector Current- Peak (10ms)
15
IB
Base Current
4
PC
Collector Power Dissipation @ TC=25℃
60
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.08 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W
BU407
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB= 0.5A
VCE= 330V; VBE= 0 VCE= 200V; VBE= 0
VEB= 6V...