BU508

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Power Dissipation- : PD= 125W@TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W BU508 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU508 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 MIN TYP. MAX UNI T 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 5.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 4.5A; IB= 2.0A VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ VEB= 5.0V ; IC= 0 1.5 V 1.0 2.0 mA 10 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 6 ...