BU526

isc Silicon NPN Power Transistor BU526 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT CER Collector-Emitter Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 86 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU526 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB=0 V(BR)CER Collector-Emitter Breakdown Voltage IC= 0.5mA; RBE≤ 100Ω V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 3A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current hFE-1 DC Current Gain IC= 6A; IB= 1.25A VCE=900V; VBE= 0; VCE=900V; VBE= 0; TC= 150℃ IC= 1A; VC...