BU626A

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 3.3V(Max.) @ IC= 8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power supply units of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 15 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.5 ℃/W BU626A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2.5A ICES Collector Cutoff Current VCE= 1000V; VBE= 0 hFE-1 DC Current Gain IC= 10A; VCE= 1.5V hFE-2 DC Current Gain IC= 2.5A; VCE= 10V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V tf Fall Time IC= 8A; ...