DatasheetsPDF.com

BU911 Dataheets PDF



Part Number BU911
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BU911 DatasheetBU911 Datasheet (PDF)

isc Silicon NPN Power Transistor BU911 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid/ relay drivers ·Motor control ·Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6.

  BU911   BU911



Document
isc Silicon NPN Power Transistor BU911 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid/ relay drivers ·Motor control ·Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 6 A ICM Collector Current-peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU911 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 4A; IB= 200mA VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125℃ VCE= 400V; IB= 0 2.5 V 1.0 5.0 mA 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA VECF C-E Diode Forward Voltage IF= 4A 2.5 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


BU908 BU911 BU920


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)