isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device
performance...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Automotive ignition applications ·Inverters circuits for motor controls
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
500
VCEO
Collector-Emitter Voltage
450
VEBO
Emitter-Base Voltage
5
IC
Collector Current
15
ICM
Collector Current-peak
30
IB
Base Current
1
IBM
Base Current-peak
5
PC
Collector Power Dissipation @TC=25℃
175
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-40~150
UNIT V V V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.0 ℃/W
BU932
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistor
BU932
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
450
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 150mA
1.8
V
V BE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 8A; IB= 150mA
VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125℃
VCE= 450V;IB= 0
2.2
V
1.0 5.0
mA
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
50
mA
hFE
DC Current Gain
IC= 5A ; VCE= 10V
300
VECF
C-E Diode Forward Voltage
IF= 10A
2.8
V
NOT...
