BU932P

isc Silicon NPN Power Transistor BU932P DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions. ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current 15 A ICM Collector Current-peak 30 A IB Base Current 1 A IBM Base Current-peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 105 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU932P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 150mA 1.8 V V BE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current IC= 8A; IB= 150mA VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ VCE= 450V;IB= 0 2.2 V 1.0 5.0 mA 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA hFE DC Current Gain IC= 5A ; VCE= 10V 300 VECF C-E Diode Forward Voltage IF= 10A...