BU941P

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (TBaB=25℃) SYMBOL PARAMETER VALUE UNIT V CBO B B Collector-Base Voltage 500 V V CEO B B Collector-Emitter Voltage 400 V V EBO B B Emitter-Base Voltage 5 V I CB B Collector Current- Continuous 15 A I CM B B Collector Current-Peak 30 A I BB B Base Current 1 A I BM B B Base Current-Peak P CB B Collector Power Dissipation @TB CB =25℃ T jB B Junction Temperature 5 A 155 W 150 ℃ T stg B B Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RB th j-cB Thermal Resistance, Junction to Case 0.97 ℃/W BU941P isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU941P ELECTRICAL CHARACTERISTICS TB CB=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VB CEO(SUS)B Collector-Emitter Voltage Sustaining IB CB =50mA; I = BB B 0 VB CE(sat)-1B Collector-Emitter Voltage Saturation I = CB B 8 A; I = BB B 100mA VB CE(sat)-2B Collector-Emitter Voltage Saturation I = CB B 10 A; I = BB B 250mA VB CE(sat)-3B Collector-Emitter Voltage Saturation I = CB B 12 A; I = BB B 300mA VB BE(sat)-1B Base-Emitter Saturation Voltage I = CB B 8 A; I = BB B 100mA M...