BU941T

isc Silicon NPN Power Transistor BU941T DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth j-c Thermal Resistance, Junction to Case 1.2 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU941T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Sustaining IC= 50mA; IB= 0 Saturation IC= 8 A; IB= 100mA Saturation IC= 10 A; IB= 250mA Saturation IC= 12 A; IB= 300mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8 A; IB= 100mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10 A; IB= 250mA VBE(sat)-3 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Cutoff Current I...