isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for rob...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high frequency electronic lighting
ballast applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCESM
Collector-Emitter Voltage VBE= 0
1500
V
VCEO Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
3
A
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
32
W
150
℃
Tstg
Storage Temperature Range
-40~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 4.0 ℃/W
BU1706AX
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BU1706AX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0;
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 1.5A; IB= 0.3A
VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125℃
VEB= 12V; IC= 0
hFE-1
DC Current Gain
IC= 5mA; VCE= 10V
hFE-2
DC Current Gain
IC= 400mA; VCE= 3V
hFE-3
DC Current Gain
IC= 1.5A; VCE= 1V
MIN TYP. MAX...
