isc Silicon NPN Power Transistor
BU2506DX
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min) ·...
isc Silicon
NPN Power
Transistor
BU2506DX
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7.5
V
IC
Collector Current- Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current- Continuous
3
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
45
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BU2506DX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0,L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.79A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB= 0.79A
VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃
VEB= 7.5V ; IC= 0
hFE-1
DC Current Gain
...
