isc Silicon NPN Power Transistor
BUW24
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 350V(Min.) ·High S...
isc Silicon
NPN Power
Transistor
BUW24
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 350V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PT
Total Power Dissipation @ TC≤25℃
TJ
Junction Temperature
3
A
100
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.25 ℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0
IEBO
Emitter Cutoff current
VEB=7V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
BUW24
MIN TYP. MAX UNIT
350
V
1.2
V
1.5
V
0.1 mA
0.1 mA
10
80
15
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