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BUW86 Dataheets PDF



Part Number BUW86
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BUW86 DatasheetBUW86 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regula- tors and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 240 V VCES Collector-Emitter Voltage VBE=0 240 V VCEO Collector-Em.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 120V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regula- tors and switching control amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 240 V VCES Collector-Emitter Voltage VBE=0 240 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 62.5 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.8 ℃/W BUW86 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW86 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.65 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 0.8A ICBO Collector-Base Cutoff Current VCB= VCBO; IE= 0 VCB= VCBO; IE= 0;TJ= 150℃ hFE DC Current Gain IC= 5A; VCE= 5V 20 1.6 V 1 2 mA fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V;ftest= 5MHz 50 MHz Switching Times; Resistive Load ton Turn-On Time 0.2 0.35 μs ts Storage Time IC= 8A; IB1= -IB2= 0.8A;VCC=60V 0.6 1.3 μs tf Fall Time 0.12 0.3 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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