BUW133H

isc Silicon NPN Power Transistor BUW133H DESCRIPTION · High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 430V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX VCES Collector- Emitter Voltage (VBE= 0) 850 VCEO Collector-Emitter Voltage 430 UNIT V V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current 10 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 135 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.93 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW133H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector-Base Cutoff Current IEBO Emitter Cutoff Current IC= 10A; IB= 1A VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TJ=100℃ VEB= 6V; IC= 0 hFE DC Current Gain COB Output Capacitanc...