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BUX10 Dataheets PDF



Part Number BUX10
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BUX10 DatasheetBUX10 Datasheet (PDF)

isc Silicon NPN Power Transistor BUX10 DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Pea.

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isc Silicon NPN Power Transistor BUX10 DESCRIPTION ·High Switching Speed ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 160 V 160 V 125 V 7 V 25 A 30 A 5 A 150 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A ;IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 20A ;IB= 2A ICEO Collector Cutoff Current ICBO Collector-Base Cutoff Current IEBO Emitter Cutoff Current VCE= 100V; IB= 0 VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TJ=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 10A ; VCE= 2V hFE-2 DC Current Gain IC= 20A ; VCE= 4V BUX10 MIN TYP. MAX UNIT 125 V 7 V 0.6 V 1.2 V 2.0 V 1.5 mA 1.5 6.0 mA 1.0 mA 20 60 10 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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