isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min) ...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power switching ·Solenoid drivers ·Automotive ignition ·Series and shunt
regulators
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
400
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
15
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
4
A
35
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.5 ℃/W
BUX37
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isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0;
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA
V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 150mA
V BE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 150mA
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
hFE
DC Current Gain
IC= 15A; VCE= 5V
BUX37
MIN TYP. MAX UNIT
400
V
7
V
1.5
V
2.0
V
2.7
V
0.25 mA
20
NOTICE: ISC reserves th...