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BUX42 Dataheets PDF



Part Number BUX42
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BUX42 DatasheetBUX42 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V (Max.)@IC= 4A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEO VCEX VCBO Collector-Emitter Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Base Voltage VEBO Emitter-Base.

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.2V (Max.)@IC= 4A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEO VCEX VCBO Collector-Emitter Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 250 V 300 V 300 V 7 V 12 A 15 A 2.4 A 120 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W BUX42 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A ;IB= 0.75A VBE(sat) Base-Emitter Saturation Voltage IC= 6A ;IB= 0.75A ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 200V; IB= 0 VCB= 300V; IE= 0 VCB= 300V; IE= 0;TC=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 4A ; VCE= 4V hFE-2 DC Current Gain IC= 6A ; VCE= 4V BUX42 MIN TYP. MAX UNIT 250 V 7 V 1.2 V 1.6 V 2.0 V 1.0 mA 1.0 5.0 mA 1 mA 15 45 8 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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