BUX59

isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A PC Collector Power Dissipation@TC=25℃ 70 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W BUX59 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 0.8A ICEO Collector Cutoff Current VCE= 90V; IB=0 ICBO Collector Cutoff Current VCB= 120V, IE=0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE-1 DC Current Gain IC= 4A ; VCE= 5V BUX59 MIN MAX UNIT 90 V 1.5 V 2.0 V 2 mA 1.0 mA 0.5 mA 20 60 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notifi...