BUY18S

isc Silicon NPN Power Transistor BUY18S DESCRIPTION · ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(MIN) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC＜75℃ Tj Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1m A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICBO Collector Cutoff Current VCB=400V; IE= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V BUY18S MIN TYP. MAX UNIT 200 V 400 V 6 V 1.0 V 1....