isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for medium-speed switching and
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7.5
A
PC
Collector Power Dissipation@TC=25℃
117
W
TJ
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.5
℃/W
2N3865
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC=3A; IB= 0.2A
hFE
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 3A; VCE= 2V
2N3865
MIN MAX UNIT
150
V
5
mA
1.0
V
2.0
V
30
90
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is p...