isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25℃
30
W
TJ
Operating Temperature Range
-65~+165 ℃
Tstg
Storage Junction Temperature Range -65~+165 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 4.67 ℃/W
2N4112
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isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0
ICEO
Collector Cutoff Current
VCE= 60V; IB=0
IEBO
Emitter Cutoff Current
VEB= 8.0V; IC=0
hFE
DC Current Gain
IC= 2A ; VCE= 5V
fT
Current Gain-Bandwidth Product
IC= 0.5A ; VCE= 10V;f=1.0MHz
2N4112
MIN MAX UNIT
60
V
0.1 mA
1
mA
100 200
60
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the ...
