2N4233A

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.32 ℃/W 2N4233A isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA; IB= 0 ICEO Collector Cutoff Current VCE=80V;IB= 0 ICEX Collector-Emitter Leakage current VCE=80V,VBE(OFF)=1.5V ICBO Collector Cutoff Current VCE=80V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VCE(sat)-3* Collector-Emitter Saturation Voltage IC= 5A; IB=1.25A VBE(ON)* Base-Emitter On Voltage IC=1.5A;VCE= 2V hFE-1* ...