isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for switching
regulator applications where high
frequency and high voltage swings and required
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
175
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
2.5
A
PC
Collector Power Dissipation@TC=25℃
25
W
TJ
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
7.0
℃/W
2N4273
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
ICEO
Collector Cutoff Current
VCE=140V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
hFE*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 1A; VCE= 10V
2N4273
MIN MAX UNIT
140
V
0.5 mA
0.5 mA
20 140
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicat...
