isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for application in industrial and commercial
equipment including high fidelity audio amplifier,series and shunt
regulators and power switches
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
140
V
120
V
VEBO IC PC TJ Tstg
Emitter-Base Voltage
7
V
Collector Current-Continuous
5
A
Collector Power Dissipation@TC=25℃ 100
W
Junction Temperature
-65~200 ℃
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.75 ℃/W
2N4347
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
ICEO
Collector Cutoff Current
VCE=100V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 5A; IB= 630mA
VBE(ON)-1* Base-Emitter On Voltage
IC=2A;VCE= 4V
VBE(ON)-2* Base-Emitter On Voltage
IC=5A;VCE= 4V
hFE-1*
DC Current Gain
IC=2A; VCE= 4V
hFE-2*
DC Current G...
