isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular TO-66 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·High voltage high current power
transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC PC TJ Tstg
Collector-Base Voltage
500
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
7
V
Collector Current-Continuous
3
A
Collector Power Dissipation@TC=25℃
70
W
Junction Temperature
150
℃
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5
℃/W
2N5468
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
ICBO
Collector Cutoff Current
VCB=500V;IB= 0
IEBO
Emitter Cutoff Current
VEB=5V; IC= 0
hFE
DC Current Gain
IC=3A; VCE= 5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage *:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 3A; IB= 0.6A
2N5468
MIN MAX UNIT
400
V
1
mA
0.1 mA
15
60
5
V
1.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time w...
