2N5743

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A PC Collector Power Dissipation@TC=25℃ 25 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 7 ℃/W 2N5743 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A; IB= -1.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A; IB= -4.0A VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -1.0A VBE(ON) Base-Emitter On Voltage IC=-10A;VCE= -5V ICEO Collector Cutoff Current VCE= -60V; IB=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -10A ; VCE= -5V hFE-2 DC Current Gain IC= -20A ; VCE= -5V 2N5743 MIN MAX UNIT -1.0 V -3.0 V -1.8 V -1.5 V -0.1 mA -0.1 mA 20 80 10 NOTICE： IS...