isc Silicon NPN Power Transistors
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 15A ·DC Current Gain-
: hFE= 20- @IC= 10A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emi.