DatasheetsPDF.com

2N5885 Dataheets PDF



Part Number 2N5885
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2N5885 Datasheet2N5885 Datasheet (PDF)

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 15A ·DC Current Gain- : hFE= 20- @IC= 10A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emi.

  2N5885   2N5885


2N5743 2N5885 2N5989


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)