2N5989

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 100 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W 2N5989 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N5989 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA ; IB= 0 40 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.8A 1.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB= 1.8A 2.5 V ICEO Collector Cutoff Current VCE= 20V ; IB= 0 2 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1.5A ;...