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NPN Transistor. 2N5989 Datasheet

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NPN Transistor. 2N5989 Datasheet






2N5989 Transistor. Datasheet pdf. Equivalent






2N5989 Transistor. Datasheet pdf. Equivalent


2N5989

Part

2N5989

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 60V(Min) ·Low Collec tor-Emitter Saturation Voltage ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amp lifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Manufacture

INCHANGE

Datasheet
Download 2N5989 Datasheet


INCHANGE 2N5989

2N5989; ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO C ollector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collect or Current-Continuous 12 A ICM Coll ector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction T emperature 20 A 100 W -65~150 ℃ Tstg Storage Temperature Range -65~ 150 ℃ THERMAL CHARAC.


INCHANGE 2N5989

TERISTICS SYMBOL PARAMETER Rth j-c Th ermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W 2N5989 isc website www.iscsemi.com isc & iscsemi is reg istered trademark isc Silicon NPN Powe r Transistor 2N5989 ELECTRICAL CHARAC TERISTICS TC=25℃ unless otherwise spe cified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-E mitter Breakdown Voltage.

Part

2N5989

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 60V(Min) ·Low Collec tor-Emitter Saturation Voltage ·100% a valanche tested ·Minimum Lot-to-Lot va riations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amp lifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃.
Manufacture

INCHANGE

Datasheet
Download 2N5989 Datasheet




 2N5989
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifier and
switching circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
20
A
100
W
-65~150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.25
UNIT
/W
2N5989
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




 2N5989
isc Silicon NPN Power Transistor
2N5989
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA ; IB= 0
40
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
0.6
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.8A
1.7
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A; IB= 1.8A
2.5
V
ICEO
Collector Cutoff Current
VCE= 20V ; IB= 0
2
mA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 1.5A ; VCE= 2V
40
hFE-2
DC Current Gain
IC= 6A ; VCE= 2V
20
120
hFE-3
DC Current Gain
IC= 12A ; VCE= 2V
7
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V;ftest= 1.0MHz
2
MHz
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark



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