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2N5991 Dataheets PDF



Part Number 2N5991
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2N5991 Datasheet2N5991 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Bas.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 100 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W 2N5991 isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N5991 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA ; IB= 0 80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.8A 1.7 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB= 1.8A 2.5 V ICEO Collector Cutoff Current VCE= 40V ; IB= 0 2 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1.5A ; VCE= 2V 40 hFE-2 DC Current Gain IC= 6A ; VCE= 2V 20 120 hFE-3 DC Current Gain IC= 12A ; VCE= 2V 7 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V;ftest= 1.0MHz 2 MHz isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N5991 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com isc & iscsemi is registered trademark .


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