isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 20-80@ IC= 4A ·Collector-Emitter Sustaining Vol...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain -
: hFE = 20-80@ IC= 4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
4
A
75
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.67 ℃/W
2N6098
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 4A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 4V,ftest= 0.1MHz
2N6098
MI...