2N6575 Datasheet

2N6575 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO = 300V(Min.) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width- modulated regulators and.

Features

Base-Emitter On Voltage IC= 7A; VCE=3V IEBO Emitter Cutoff Current VEB= 8V; IC= 0 ICBO Collector Base Cutoff Current VCB=700V; IE= 0 hFE-1 DC Current Gain IC=3A; VCE=3V hFE-2 DC Current Gain IC= 7A; VCE= 3V fT Current Gain-Bandwidth Product IC= 1A; VCE= 10V Switching times Ton On Time toff Off Time IC= 7A; IB=1.4A, 2N6575 MIN MAX UNIT 1 V 1.4 V 0.1 mA 0.1 mA 20 60 7 21 5 MHz 1 μs 3.2 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only a.