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NPN Transistor. TIP41C Datasheet

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NPN Transistor. TIP41C Datasheet
















TIP41C Transistor. Datasheet pdf. Equivalent













Part

TIP41C

Description

TO-220C NPN Transistor



Feature


isc Silicon NPN Power Transistors TIP41 C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V( Min) ·Complement to Type TIP42C ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation APPLICATIONS ·Designed for use in ge neral purpose amplifer and switching ap plications ABSOLUTE MA.
Manufacture

INCHANGE

Datasheet
Download TIP41C Datasheet


INCHANGE TIP41C

TIP41C; XIMUM RATINGS(Ta=25℃) SYMBOL PARAMET ER VALUE UNIT VCBO Collector-Base V oltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Vo ltage 5 V IC Collector Current-Cont inuous 6 A ICM Collector Current-Pe ak 10 A IB Base Current Collector Power Dissipation TC=25℃ PC Collec tor Power Dissipation Ta=25℃ Tj Ju nction Temperature 3 A.


INCHANGE TIP41C

65 W 2 150 ℃ Tstg Storage Temper ature Range -65~150 ℃ THERMAL CHARA CTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction t o Case 1.92 ℃/W Rth j-a Thermal Res istance,Junction to Ambient 62.5 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICA L CHARACTERISTICS TC=25℃ unl.


INCHANGE TIP41C

ess otherwise specified SYMBOL PARAMET ER CONDITIONS TIP41C MIN MAX UNIT VC EO(SUS) Collector-Emitter Sustaining Vo ltage IC= 30mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage I C= 6A; IB= 1.5A 1.5 V VBE(on) Base-E mitter On Voltage IC= 6A; VCE= 4V 2.0 V ICBO Collector Cutoff Current VC B= 100V; IE= 0 0.4 mA ICEO Collecto r Cutoff Current .





Part

TIP41C

Description

TO-220C NPN Transistor



Feature


isc Silicon NPN Power Transistors TIP41 C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V( Min) ·Complement to Type TIP42C ·Mini mum Lot-to-Lot variations for robust de vice performance and reliable operation APPLICATIONS ·Designed for use in ge neral purpose amplifer and switching ap plications ABSOLUTE MA.
Manufacture

INCHANGE

Datasheet
Download TIP41C Datasheet




 TIP41C
isc Silicon NPN Power Transistors
TIP41C
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Complement to Type TIP42C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
TC=25
PC
Collector Power Dissipation
Ta=25
Tj
Junction Temperature
3
A
65
W
2
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.92 /W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 TIP41C
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP41C
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
1.5
V
VBE(on) Base-Emitter On Voltage
IC= 6A; VCE= 4V
2.0
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
0.4
mA
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
0.7
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 4V
30
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
15
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
3
MHz
Switching Time
ton
Turn-On Time
toff
Turn-Off Time
IC= 6A; IB1= -IB2= 0.6A;
VBE(off)= 4V, RL= 5Ω
0.6
μs
1.0
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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