isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4382
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC4382
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·DC Current Gain-
: hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Complement to Type 2SA1668 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV vertical output ,audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
1
A
25
W
150
℃
-55~150 ℃
isc Website:www.iscsemi.cn
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isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC4382
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A
1.0
V
ICBO
Collector Cutoff Current
VCB= 200V ; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10 μA
hFE
DC Current Gain
IC= 0.7A ; VCE= 10V
60
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
35
pF
fT
Current-Gain—Bandwidth Product
IE= -0.2A ; VCE= 12V
15
MHz
Switching Times
t...