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2SD811 Dataheets PDF



Part Number 2SD811
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD811 Datasheet2SD811 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD811 DESCRIPTION ·High Breakdown Voltage- : VCBO= 900V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Vol.

  2SD811   2SD811


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