isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD811
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 900V (Min) ·High Switching Speed ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for use in converters, inverters, switching
regulators, motor control systems etc
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Vol.