NPN Transistor. 2SD2340 Datasheet

2SD2340 Transistor. Datasheet pdf. Equivalent


Part 2SD2340
Description NPN Transistor
Feature isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 DESCRIPTION ·Collector-.
Manufacture INCHANGE
Datasheet
Download 2SD2340 Datasheet


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2SD2340
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2340
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
·High DC Current Gain
: hFE= 5000(Min) @IC= 3A
·Low Collector Saturation Voltgae-
: VCE(sat)= 2.5V(Max.)@ IC= 5A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audioregulator and general purpose.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICP
Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
10
A
2.5
W
50
150
Tstg
Storage Temperature Range
-55~150
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2SD2340
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2340
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 130V; IE= 0
ICEO
Collector Cutoff current
VCE= 110V,IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 3A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
IC= 5A, IB1= IB2= 5mA
tf
Fall Time
MIN TYP. MAX UNIT
110
V
130
V
2.5
V
3.0
V
100 μA
100 μA
3.0
mA
5000
20
MHz
3.5
μs
2.5
μs
0.6
μs
isc websitewww.iscsemi.com
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