2SD2340

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio，regulator and general purpose. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2.5 W 50 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA ICBO Collector Cutoff Current VCB= 130V; IE= 0 ICEO Collector Cutoff current VCE= 110V,IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 5V fT Current-...