IPB200N25N3

IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 250 V 20 mW 64 A 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package Marking PG-TO263-3 200N25N PG-TO220-3 200N25N PG-TO262-3 200N25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current Pulsed drain current2) Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=47 A, R GS=25 W Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 64 46 256 320 10 ±20 300 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C Rev. 2.4 page 1 2011-07-14 IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient R thJA minimal footprint - 6 cm2 cooling area3) - - 0.5 K/W - 62 - 40 Electrical characteristics, at T j...