IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent ga...
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
OptiMOSTM3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
250 V 20 mW 64 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Halogen-free according to IEC61249-2-21
Ideal for high-frequency switching and synchronous rectification
Type
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Package Marking
PG-TO263-3 200N25N
PG-TO220-3 200N25N
PG-TO262-3 200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse
ID
I D,pulse E AS
T C=25 °C T C=100 °C T C=25 °C I D=47 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
64 46 256 320 10 ±20 300 -55 ... 175 55/175/56
Unit A
mJ kV/µs V W °C
Rev. 2.4
page 1
2011-07-14
IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction ambient
R thJA minimal footprint
-
6 cm2 cooling area3)
-
-
0.5 K/W
-
62
-
40
Electrical characteristics, at T j...