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IPI26CN10NG Datasheet, Equivalent, Power-Transistor.

Power-Transistor

Power-Transistor

 

 

 

Part IPI26CN10NG
Description Power-Transistor
Feature IPB26CN10N G IPD25CN10N G IPI26CN10N G I PP26CN10N G OptiMOS™2 Power-Transist or Features
• N-channel, normal level
• Excellent gate charge x R DS(on) p roduct (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on), max (TO252) ID 100 V 25 mW 35 A
• 1 75 °C operating temperature
• Pb-fr ee lead plating; RoHS compliant
• Qua lified according to JEDEC1) for target application
• Ideal for high-frequen cy switching and synchronous rectificat ion
• Halogen-free according to IEC61 249-2-21 Type IPB26CN10N G IPD25CN10 N G IPI26CN10N G IPP26CN10N G Packag e PG-TO263-3 PG-TO252-3 PG-TO2 .
Manufacture Infineon
Datasheet
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Part IPI26CN10NG
Description Power-Transistor
Feature IPB26CN10N G IPD25CN10N G IPI26CN10N G I PP26CN10N G OptiMOS™2 Power-Transist or Features
• N-channel, normal level
• Excellent gate charge x R DS(on) p roduct (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on), max (TO252) ID 100 V 25 mW 35 A
• 1 75 °C operating temperature
• Pb-fr ee lead plating; RoHS compliant
• Qua lified according to JEDEC1) for target application
• Ideal for high-frequen cy switching and synchronous rectificat ion
• Halogen-free according to IEC61 249-2-21 Type IPB26CN10N G IPD25CN10 N G IPI26CN10N G IPP26CN10N G Packag e PG-TO263-3 PG-TO252-3 PG-TO2 .
Manufacture Infineon
Datasheet
Download IPI26CN10NG Datasheet

IPI26CN10NG

IPI26CN10NG
IPI26CN10NG

IPI26CN10NG

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