IPP26CN10N

IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS™2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 25 mW 35 A 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 Marking 26CN10N 25CN10N 26CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current2) I D,pulse T C=100 °C T C=25 °C Avalanche energy, single pulse E AS I D=35 A, R GS=25 W Reverse diode dv /dt dv /dt I D=35 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V PG-TO220-3 26CN10N Value 35 25 140 65 6 ±20 71 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C Rev. 1.09 page 1 2013-07-09 IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junctio...