IPB019N06L3

Type IPB019N06L3 G OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Type IPB019N06L3 G Product Summary V DS R DS(on),max ID 60 V 1.9 mΩ 120 A Package Marking PG-TO-263-3 019N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature ID T C=25 °C2) T C=100 °C I D,pulse T C=25 °C E AS I D=100 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 269 A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Value 120 120 480 634 ±20 250 -55 ... 175 55/175/56 www.DRateavS.he2e.t24U.net page 1 Unit A mJ V W °C 2009-11-16 IPB019N06L3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area5) min. Values typ. Unit max. - - 0.6 K...