Document
Ie]R
"%&$!"#™3 Power-Transistor
Features Q& ( , - 7@B( + :? 8 2 ? 5 . ? :? D6BBEAD:3 =6 ) @G6B, EAA=I Q* E2 =:7:65 2 44@B5:? 8 D@ $ )# 7@BD2 B86D2 AA=:42 D:@? C
Q' 492 ? ? 6= Q' @B> 2 ==6F6= Q. =DB2 =@G @? B6C:CD2 ? 46 R 9H"\[# Q F2 =2 ? 496 D6CD65 Q) 3 7B66 A=2 D:? 8 + @" , 4@> A=:2 ? D Q" 2 =@86? 7B66 2 44@B5:? 8 D@ #
Product Summary V 9H R ,@? >2 H I9
Type
#) ' ' !
#) ) ' ' !
IPP023N04N G IPB023N04N G
,( K *&+ Z" 1( 6
Package Marking
E=%ID*.+%+ (*+C(,C
E=%ID**(%+ (*+C(,C
Maximum ratings, 2 DT W T E? =6CC@D96BG:C6 CA64:7:65
Parameter
Symbol Conditions
@? D:? E@EC5B2 :? 4EBB6? D
) E=C65 5B2 :? 4EBB6? D*# F2 =2 ? 496 4EBB6? D C:? 8=6 AE=C6+# F2 =2 ? 496 6? 6B8I C:? 8=6 AE=C6 !2 D6 C@EB46 F@=D2 86 )# $ , - 2 ? 5 $ ,
I9
V =H / T 8 T
V =H / T 8 T
I 9$]aY_R I 6H E 6H V =H
T 8 T T 8 T I 9 R =H "
Value
Unit
1(
6
1(
,((
1(
)-(
Z@
q*(
K
+ 6F
A2 86
Maximum ratings, 2 DT W T E? =6CC@D96BG:C6 CA64:7:65
Parameter
Symbol Conditions
) @G6B5:CC:A2 D:@? ( A6B2 D:? 8 2 ? 5 CD@B2 86 D6> A6B2 DEB6
P `\`
T 8 T
T W T _`T
# 4=:> 2 D:4 42 D68@BI #' #
IPP023N04N G IPB023N04N G
Value
Unit
)./
L
T
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
-96B> 2 =B6C:CD2 ? 46 ;E? 4D:@? 42 C6 R `U@8
%
, & F6BC:@? 56F:46 @? )
R `U@6 > :? :> 2 =7@@DAB:? D
4> V 4@@=:? 8 2 B62 ,#
%
%
(&1 A'L
%
,(
Electrical characteristics, 2 DT W T E? =6CC@D96BG:C6 CA64:7:65
Static characteristics
B2 :? C@EB46 3 B62 <5@G? F@=D2 86
V "7G#9HH V =H / I 9 >
,(
%
!2 D6 D9B6C9@=5 F@=D2 86
V =H"`U# V 9H4V =H I 9 W
*
%
16B@ 82 D6 F@=D2 86 5B2 :? 4EBB6? D
I 9HH
V 9H / V =H / T W T
%
(&)
%K , ) s6
V 9H / V =H /
T W T
%
)(
)((
!2 D6 C@EB46 =62 <2 86 4EBB6? D
I =HH
V =H / V 9H /
%
)(
)(( [6
B2 :? C@EB46 @? CD2 D6 B6C:CD2 ? 46-# R 9H"\[# V =H / I 9
%
)&1
*&+ Z"
!2 D6 B6C:CD2 ? 46
R=
%
)&1
%"
I^N[_P\[QaP`N[PR
g S_
gV 9Hg5*gI 9gR 9H"\[#ZNd
I 9
/-
)-(
%H
*# , 66 7:8EB6 7@B> @B6 56D2 :=65 :? 7@B> 2 D:@? +# , 66 7:8EB6 7@B> @B6 56D2 :=65 :? 7@B> 2 D:@? ,# 6F:46 @? > > H > > H
> > 6A@HI ) 4@? ? 64D:@?
) :CF6BD:42 =:? CD:==2 :B
-# & 62 CEB65 7B@> 5B2 :? D2 3 D@ C@EB46 A:?
+ G:D9 4> @? 6 =2 I6B W > D9:4< 4@AA6B2 B62 7@B5B2 :?
+ 6F
A2 86
Parameter
Symbol Conditions
IPP023N04N G IPB023N04N G
min.
Values typ.
Unit max.
Dynamic characteristics
#? AED42 A2 4:D2 ? 46 ( EDAED42 A2 4:D2 ? 46 + 6F6BC6 DB2 ? C76B42 A2 4:D2 ? 46 -EB? @? 56=2 I D:> 6 + :C6 D:> 6 -EB? @7756=2 I D:> 6
2 ==D:> 6
C V__
%
C \__
V =H / V 9H / f & " J
%
8^__
%
t Q"\[#
%
t^
V 99 / V =H /
%
t Q"\SS#
I 9 R =
"
%
tS
%
!2 D6 92 BT6 92 B2 4D6B:CD:4C.# !2 D6 D@ C@EB46 492 B86 !2 D6 492 B86 2 DD9B6C9@=5 !2 D6 D@ 5B2 :? 492 B86 , G:D49:? 8 492 B86 !2 D6 492 B86 D@D2 = !2 D6 A=2 D62 E F@=D2 86
!2 D6 492 B86 D@D2 = CI? 4
-
( EDAED492 B86
Q T_
%
Q T"`U#
%
Q TQ
V 99 / I 9
%
Q _c
V =H D@ /
%
QT
%
V ]YN`RNa
%
Q T"_e[P#
V 9H
/ V =H D@ /
%
Q \__
V 99 / V =H /
%
Reverse Diode
:@56 4@? D:? E@EC7@BG2 B5 4EBB6? D I H
%
T 8 T
:@56 AE=C6 4EBB6? D
I H$]aY_R
%
:@56 7@BG2 B5 F@=D2 86
V H9
V =H / I < T W T
%
+ 6F6BC6 B64@F6BI 492 B86
Q ^^
V G / I <4I H Qi <'Qt W C
%
.# , 66 7:8EB6 7@B82 D6 492 B86 A2 B2 > 6D6B567:? :D:@?
/+(( )(((( ]<
*((( */((
//
%
*/
% [_
.&.
%
,(
%
/&0
%
+-
% [8
**
%
))
%
*,
%
1(
)*(
,&0
%K
0-
% [8
/+
%
%
1( 6
%
,((
(&1+ )&* K
0(
% [8
+ 6F
A2 86
1 Power dissipation P `\`4S"T 8#
200
2 Drain current I 94S"T 8 V =H" /
100
IPP023N04N G IPB023N04N G
P tot [W] I D [A]
80 150
60 100
40
50 20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area I 94S"V 9H T 8 T D 4( A2 B2 > 6D6B t ]
103
=:> :D65 3 I @? CD2 D6 ^R_V_`N[PR
102
WC WC WC
4 Max. transient thermal impedance Z `U@84S"t ]# A2 B2 > 6D6B D 4t ]'T
100
(&-
(&*
10-1 (&)
I D [A] Z thJC [K/W]
98 >C
>C
101
(&(-
(&(*
(&()
10-2
C:? 8=6 AE=C6
100 10-1
+ 6F
100
101
V DS [V]
10-3
102
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
A2 86
5 Typ. output characteristics I 94S"V 9H T W T A2 B2 > 6D6B V =H
400
/ /
300
200
IPP023N04N G IPB023N04N G 6 Typ. drain-source on resistance R 9H"\[#4S"I 9 T W T A2 B2 > 6D6B V =H
4
/
/
3
/
/
/
2
/ /
I D [A] R DS(on) [m ]
100
/
1
0
0
1
2
V DS [V]
7 Typ. transfer chara.