IPI037N08N3

OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Product Summary V DS R DS(on),max ID 80 V 3.5 mΩ 100 A Type IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Package Marking PG-TO220-3 037N08N PG-TO262-3 037N08N PG-TO263-3 035N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse3) ID I D,pulse E AS T C=25 °C2) T C=100 °C T C=25 °C I D=100 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Value 100 100 400 510 ±20 214 -55 ... 175 55/175/56 Rev. 2.4 page 1 Unit A mJ V W °C 2010-06-23 IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, R thJA minimal footprint - junction - ambient 6 cm2 cooling area4) -...