Type
OptiMOS™3 Power-Transistor
Features
• for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R ...
Type
OptiMOS™3 Power-
Transistor
Features
for sync. rectification, drives and dc/dc SMPS Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
N-channel, normal level
Avalanche rated Qualified according to JEDEC1) for target applications
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Type
IPB037N06N3 G IPI040N06N3 G
IPB037N06N3 G IPI040N06N3 G
Product Summary
IPP040N06N3 G
V DS R DS(on),max (SMD) ID
60 V 3.7 mΩ 90 A
previous engineering sample codes: IPP04xN06N IPI04xN06N IPB04xN06N
IPP040N06N3 G
Package Marking
PG-TO263-3 037N06N
PG-TO262-3 040N06N
PG-TO220-3 040N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
ID
T C=25 °C2)
90
A
T C=100 °C
90
Pulsed drain current3)
I D,pulse T C=25 °C
360
Avalanche energy, single pulse
E AS
I D=90 A, R GS=25 Ω
165
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
T C=25 °C
188
W
Operating and storage temperature T j, T stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
www.DataShe1e)Jt4-SUT.cDo2m0 and JESD22 2) Current is limited by bondwire; with an R thJC=0.8 K/W the chip is able to carry 162 A. 3) See figure 3 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.03
page 1
2009-12-17
IPB037N06N3 G IPI040N06N3 G IPP040...