Document
IPP041N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO-263) ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
IPI041N12N3 G IPB038N12N3 G
120 V 3.8 mW 120 A
Type
IPB038N12N3 G IPI041N12N3 G
IPP041N12N3 G
Package Marking
PG-TO263-3 038N12N
PG-TO262-3 041N12N
PG-TO220-3 041N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 W
Gate source voltage 4)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
120 120 480 900 ±20 300 -55 ... 175 55/175/56
Unit A
mJ V W °C
Rev. 2.3
page 1
2014-04-15
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance,
R thJA minimal footprint
-
junction - ambient
6 cm2 cooling area5)
-
-
0.5 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
120
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=270 µA
2
3
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V, T j=25 °C
-
0.1
-V 4
1 µA
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
V DS=100 V, V GS=0 V, T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=100 A
-
V GS=10 V, I D=100 A,
-
TO263
RG
-
g fs
|V DS|>2|I D|R DS(on)max, I D=100 A
83
10
100
1
100 nA
3.5
4.1 mW
3.2
3.8
1.4
-W
165
-S
1)J-STD20 and JESD22
2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A.
3) See figure 3
4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 2.3
page 2
2014-04-15
Parameter
Symbol Conditions
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss
-
C oss
V GS=0 V, V DS=60 V, f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=60 V, V GS=10 V,
-
I D=100 A,
t d(off)
R G,ext=1.6 W
-
tf
-
10400 13800 pF
1320 1760
61
-
35
- ns
52.0
-
70
-
21
-
Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs
-
Q gd
V DD=60.1 V,
-
Q sw
I D=100 A,
-
Qg
V GS=0 to 10 V
-
V plateau
-
Q oss
V DD=60.1 V, V GS=0 V
-
52
- nC
37
-
58
-
158
211
5.0
-V
182
243 nC
Reverse Diode
Diode continous forward current Diode pulse current
IS I S,pulse
T C=25 °C
-
-
120 A
-
-
480
Diode forward voltage
V SD
V GS=0 V, I F=100 A, T j=25 °C
-
0.9
1.2 V
Reverse recovery time Reverse recovery charge
t rr
V R=60 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
123
ns
-
356
- nC
6) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2014-04-15
1 Power dissipation P tot=f(T C)
IPP041N12N3 G
2 Drain current I D=f(T C); V GS≥10 V
IPI041N12N3 G IPB038N12N3 G
350
140
300
120
250
100
200
80
Ptot [W] ID [A]
150
60
100
40
50
20
0
0
50
100
150
200
TC [°C]
0
0
50
100
150
200
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
limited by on-state resistance
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
100
1 µs
ID [A] ZthJC [K/W]
100 µs 10 µs
1 ms 10 ms
102
DC
101
0.5
10-1
0.2
0.1
0.05
0.02
10-2
0.01 single pulse
100 10-1
Rev. 2.3
100
101
102
VDS [V]
10-3
103
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2014-04-15
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
400 320
7V 10 V
6.5 V 6V
240
10
9
4.5 V
8
7
5V
ID [A] RDS(on) [mW]
6
5.5 V
160 5
4
80
5V
3
4.5 V
0
2
0
1
2
3
4
5
0
VDS [V]
5.5 V 6V 10 V
50
100
150
ID [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
300
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
200
ID [A] gfs [S]
250 160
200 120
150
80 100
175 °C
25 °C
40 50
0 0
Rev. 2.3
2
4
6
VGS [V]
0
8
0
page 5
50
100
150
ID [A]
2014-04.