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IPP041N12N3 Dataheets PDF



Part Number IPP041N12N3
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPP041N12N3 DatasheetIPP041N12N3 Datasheet (PDF)

IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification IPI041N12N3 G IPB038N12N3 G 120 V 3.8 mW 120 A Type IPB038N12N3 G IPI041N12N3 G .

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IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO-263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant, halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification IPI041N12N3 G IPB038N12N3 G 120 V 3.8 mW 120 A Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Package Marking PG-TO263-3 038N12N PG-TO262-3 041N12N PG-TO220-3 041N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=100 A, R GS=25 W Gate source voltage 4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 120 120 480 900 ±20 300 -55 ... 175 55/175/56 Unit A mJ V W °C Rev. 2.3 page 1 2014-04-15 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, R thJA minimal footprint - junction - ambient 6 cm2 cooling area5) - - 0.5 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 120 - Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2 3 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 -V 4 1 µA Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V DS=100 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - R DS(on) V GS=10 V, I D=100 A - V GS=10 V, I D=100 A, - TO263 RG - g fs |V DS|>2|I D|R DS(on)max, I D=100 A 83 10 100 1 100 nA 3.5 4.1 mW 3.2 3.8 1.4 -W 165 -S 1)J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A. 3) See figure 3 4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2014-04-15 Parameter Symbol Conditions IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss - C oss V GS=0 V, V DS=60 V, f =1 MHz - C rss - t d(on) - tr V DD=60 V, V GS=10 V, - I D=100 A, t d(off) R G,ext=1.6 W - tf - 10400 13800 pF 1320 1760 61 - 35 - ns 52.0 - 70 - 21 - Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs - Q gd V DD=60.1 V, - Q sw I D=100 A, - Qg V GS=0 to 10 V - V plateau - Q oss V DD=60.1 V, V GS=0 V - 52 - nC 37 - 58 - 158 211 5.0 -V 182 243 nC Reverse Diode Diode continous forward current Diode pulse current IS I S,pulse T C=25 °C - - 120 A - - 480 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.9 1.2 V Reverse recovery time Reverse recovery charge t rr V R=60 V, I F=I S, Q rr di F/dt =100 A/µs - 123 ns - 356 - nC 6) See figure 16 for gate charge parameter definition Rev. 2.3 page 3 2014-04-15 1 Power dissipation P tot=f(T C) IPP041N12N3 G 2 Drain current I D=f(T C); V GS≥10 V IPI041N12N3 G IPB038N12N3 G 350 140 300 120 250 100 200 80 Ptot [W] ID [A] 150 60 100 40 50 20 0 0 50 100 150 200 TC [°C] 0 0 50 100 150 200 TC [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 limited by on-state resistance 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 1 µs ID [A] ZthJC [K/W] 100 µs 10 µs 1 ms 10 ms 102 DC 101 0.5 10-1 0.2 0.1 0.05 0.02 10-2 0.01 single pulse 100 10-1 Rev. 2.3 100 101 102 VDS [V] 10-3 103 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2014-04-15 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 400 320 7V 10 V 6.5 V 6V 240 10 9 4.5 V 8 7 5V ID [A] RDS(on) [mW] 6 5.5 V 160 5 4 80 5V 3 4.5 V 0 2 0 1 2 3 4 5 0 VDS [V] 5.5 V 6V 10 V 50 100 150 ID [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 200 ID [A] gfs [S] 250 160 200 120 150 80 100 175 °C 25 °C 40 50 0 0 Rev. 2.3 2 4 6 VGS [V] 0 8 0 page 5 50 100 150 ID [A] 2014-04.


IPI041N12N3 IPP041N12N3 IPB038N12N3


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