OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very lo...
OptiMOS™3 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) High current capability 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21
Type
IPB039N10N3 G
IPB039N10N3 G
Product Summary V DS R DS(on),max ID
100 V 3.9 mΩ 160 A
Package Marking
PG-TO263-7 039N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg www.DataSheIeEt4CUc.cliommatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
Unit
160
A
113
640
340
mJ
±20
V
214
W
-55 ... 175
°C
55/175/56
Rev.2.03
page 1
2009-12-17
IPB039N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
-
-
0.7 K/W
-
-
62
-
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(t...