Type
!"#$%!&™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Type
!"#$%!&™3 Power-
Transistor
Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
Type
IPB041N04N G
IPP041N04N G
IPP041N04N G IPB041N04N G
40 V 4.1 mW 80 A
Package Marking
PG-TO263-3 041N04N
PG-TO220-3 041N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22
ID
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
I D,pulse I AS E AS V GS
T C=25 °C T C=25 °C I D=80 A, R GS=25 W
Value
Unit
80
A
80
400
80
60
mJ
±20
V
Rev. 1.2
page 1
2009-12-17
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPP041N04N G IPB041N04N G
Value
Unit
94
W
-55 ... 175
°C
55/175/56
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
SMD version, device on PCB
R thJA minimal footprint
-
6 cm² cooling area4)
-
-
...
